1xEgInAs
1xEgInAs is not a chemical compound but a notation that appears in semiconductor device modeling and materials databases. It is used to denote the baseline or reference bandgap energy (Eg) for Indium Arsenide (InAs). The prefix “1x” typically indicates an unscaled value, which software tools then modify to account for effects such as temperature, strain, or alloying in simulations.
Indium Arsenide is a direct-bandgap III–V semiconductor with a narrow bandgap. At room temperature, its bandgap
In computational models, Eg values serve as a basis for calculating band alignments, carrier effective masses,
Overall, 1xEgInAs is a modeling convention used to reference the intrinsic bandgap of InAs in a given