1xEgInAs

1xEgInAs is not a chemical compound but a notation that appears in semiconductor device modeling and materials databases. It is used to denote the baseline or reference bandgap energy (Eg) for Indium Arsenide (InAs). The prefix “1x” typically indicates an unscaled value, which software tools then modify to account for effects such as temperature, strain, or alloying in simulations.

Indium Arsenide is a direct-bandgap III–V semiconductor with a narrow bandgap. At room temperature, its bandgap Eg is about 0.36 eV. InAs crystallizes in the zinc blende structure and exhibits relatively high electron mobility, which, together with its small bandgap, makes it valuable for infrared optoelectronic devices and high-speed electronics. It is commonly used in heterostructures with materials such as GaAs, AlGaAs, or InGaAs for quantum wells, detectors, and high-frequency transistors.

In computational models, Eg values serve as a basis for calculating band alignments, carrier effective masses, optical transitions, and other electronic properties. The 1xEgInAs label provides a reference energy scale that can be scaled or modified to simulate effects such as temperature dependence (Eg changing with temperature), mechanical strain, or compositional changes in related alloys. While 1xEgInAs helps organize material parameters in simulations, the exact interpretation of the label can vary between software packages, so consulting specific documentation is advisable.

Overall, 1xEgInAs is a modeling convention used to reference the intrinsic bandgap of InAs in a given simulation context, rather than a distinct material or compound.