DDR53200

DDR53200 is a variant of DDR5 SDRAM introduced in the late 2019s primarily for high‑performance computing and data‑center server applications. The designation indicates a nominal data rate of 5 320 MT/s, which translates to a theoretical bandwidth of approximately 42 GB/s per channel when operating within the standard 16‑bit wide memory bus. The core operates from 1.1 V, allowing for lower power consumption relative to earlier DDR families while benefiting from the advanced prefetch and staggered burst support that DDR5 offers.

Typical modules built around DDR53200 support densities ranging from 8 Gb to 16 Gb per chip, and common package sizes include 184‑pin DIMM and eLPOD variants. The memory architecture includes on‑module power management logic that can dynamically adjust voltage and frequency based on workload, which enhances efficiency in burst‑intensive workloads such as AI inference and high‑speed data analytics.

From a contractual standpoint, DDR53200 has been adopted by several major chipset and processor vendors to meet the growing demand for larger on‑board caches and high bandwidth for emerging multi‑core CPUs. The memory features are supplemented with a proven error‑correcting code (ECC) system that can detect and correct single‑bit errors, making it suitable for mission‑critical enterprise environments.

In terms of legacy, DDR53200 succeeded earlier DDR4‑2666 and DDR4‑3200 releases and provided a smoother transition path toward even faster DDR5 offerings such as DDR5‑5200 and upcoming DDR5‑5600. Design support tools and reference boards were provided by memory manufacturers and OEMs to ease the integration of DDR53200 into motherboards and server chassis.

Overall, DDR53200 represents an important intermediate mark on the evolution of DDR memory, combining an optimized speed, lower power profile, and enhanced data integrity mechanisms that have proven valuable for the high‑throughput workloads that drive modern data‑center and supercomputing technology.