Transistorene

Transistorene is a hypothetical semiconductor material proposed as a future platform for nanoscale transistors. The name combines transistor with the -ene suffix used in several two‑dimensional materials and organic systems. It exists in theoretical discussions rather than in physical samples.

Background and status

In theoretical work spanning the 2010s and beyond, transistorene was described as a two‑dimensional lattice capable of maintaining a tunable band gap and high carrier mobility, with properties that could enable low‑power operation and aggressive device scaling. As of now, no experimental realization has been reported.

Structure and properties

Conceptually, transistorene is envisioned as a layered or sheet‑like material comprising light elements in a covalent network. Predicted properties include a tunable band gap, adjustable through composition, strain, or stacking, and high electron and hole mobilities. Thermal stability and mechanical flexibility are often cited as advantages. The exact chemical composition remains variable across different theoretical proposals, commonly involving silicon, carbon, or related constituents in a 2D framework.

Synthesis and challenges

The primary barriers are chemical stability, scalable synthesis, and integration with existing semiconductor processes. Achieving uniform, defect‑free sheets and reliable, low‑resistance contacts with metals pose significant technical challenges. Much of the work on transistorene remains computational or conceptual, with real‑world realization uncertain.

Applications and outlook

If realized, transistorene could underpin next‑generation transistors, versatile heterostructures with other 2D materials, and flexible electronics. At present, it serves as a theoretical construct for exploring band structure engineering and dimensional confinement in pursuit of higher performance than conventional silicon or present 2D alternatives.