HBM22E

HBM22E is not a widely recognized public specification for memory technology as of 2024. It may be a typographical error or alternate branding for a known member of the High Bandwidth Memory (HBM) family, such as HBM2E or HBM3. HBM refers to a family of stacked DRAM technologies that place multiple DRAM dies on an integrated interposer and connect to a processor over a very wide, high-speed interface, achieving high bandwidth with relatively low power and a small footprint. The approach uses through-silicon vias and an interposer to share data across chips, enabling high memory bandwidth suitable for GPUs and AI accelerators.

If the intended reference is HBM2E, this is an enhanced version of HBM2 designed to deliver higher bandwidth and density over the HBM2 baseline while maintaining power efficiency. HBM2E generally uses larger stacks of DRAM dies and higher data rates per pin, with a broad external interface constrained by the interposer architecture. It is implemented on graphics cards and accelerators that require substantial memory throughput.

Adoption of HBM and its evolutions has been driven by the need for higher bandwidth with lower energy per bit, enabling improved performance in high-performance computing, machine learning, and graphics workloads. Common competitors or alternatives include GDDR and other memory technologies, but HBM remains notable for its compact form factor and bandwidth advantages.

See also HBM, HBM2, HBM2E, HBM3.