2HSiC

2H silicon carbide (2H‑SiC) is one of the many polytypes of silicon carbide, a compound semiconductor composed of equal parts silicon and carbon. The designation “2H” refers to the hexagonal crystal symmetry with a two-layer repeat and a 60‑degree rotation between successive layers. This structure differs from the more commonly used cubic 3C‑SiC, while also sharing similarities with the 6H and 4H polytypes that have longer repeat sequences. The 2H polytype exhibits an indirect bandgap of approximately 3.19 eV at room temperature and a high lattice thermal conductivity, making it attractive for high‐temperature, high‐frequency, and high‐power electronic devices.

The material can be produced using several methods, including chemical vapor deposition (CVD) on hexagonal silicon carbide substrates, wafer bonding, or epitaxial growth on hexagonal silicon or sapphire wafers. Recent advances have demonstrated the fabrication of thin‑film 2H‑SiC layers with controlled thicknesses, enabling integration into heterostructure devices. Because of its wide bandgap and robust electrical properties, 2H‑SiC is investigated for MOSFETs, Schottky diodes, and high‑power rectifiers. Research also explores its use in deep‑ultraviolet light‑emitting diodes and gas‑sensor applications, where the material’s chemical inertness and high breakdown voltage provide significant advantages.

Furthermore, 2H‑SiC offers intriguing opportunities for 2D material engineering. Atomically thin layers of 2H‑SiC can exhibit different electronic behavior than bulk crystals, potentially useful in flexible electronics. Ongoing studies focus on defect engineering, strain tuning, and the fabrication of van der Waals heterostructures that incorporate 2H‑SiC with other layered compounds.