InAsGaSbbased
InAsGaSb-based materials refer to semiconductor systems that blend indium arsenide (InAs) and gallium antimonide (GaSb), typically described by the composition InAsxGa1−xSb or by InAs/GaSb heterostructures and superlattices. These III–V compounds crystallize in the zinc blende structure and are studied for infrared optoelectronic applications. By adjusting the As content and the relative layer thickness in superlattices, the electronic structure can be engineered for specific infrared responses.
A defining feature of InAsGaSb-based structures is the type-II broken-gap band alignment at the InAs/GaSb interface.
Growth and fabrication methods include molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). Substrates
Applications span infrared imaging, night-vision systems, and spectroscopy, with particular emphasis on type-II superlattice infrared detectors
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