siliconcarbid

Silicon carbide (SiC) is a chemical compound of silicon and carbon. It is renowned for extreme hardness, chemical inertness, and favorable electronic properties that support high-voltage, high-temperature operation. SiC occurs in several crystal structures, called polytypes; the most common for electronics are 4H-SiC and 6H-SiC, with the cubic 3C-SiC also studied. The bandgap depends on the polytype, spanning roughly 2.3 eV (3C) to 3.3 eV (4H), giving a wide bandgap that enables devices to operate at higher voltages and temperatures than silicon.

Key material properties include a high breakdown electric field (about 2–3 MV/cm), high thermal conductivity (roughly 120–270 W/mK), and a high melting point. These attributes lead to low switching losses and high-temperature stability, making SiC attractive for power electronics, such as diodes and metal-oxide-semiconductor field-effect transistors (MOSFETs) used in electric vehicles, renewable-energy inverters, and high-power industrial systems. SiC's wide bandgap also enables ultraviolet optoelectronic applications, though commercial LEDs are dominated by other materials.

Manufacturing involves growing large, high-purity crystals by sublimation methods or chemical vapor deposition to produce wafers, followed by doping to create n-type or p-type regions. Processing challenges include defect control and forming good electrical contacts, but production has expanded to multiple facilities worldwide, with 4H-SiC and 6H-SiC wafers commonly used.

Beyond semiconductors, SiC is a well-established abrasive material used for grinding and lapping, owing to its hardness and thermal stability. Its combination of mechanical and electronic properties positions silicon carbide as a key wide-bandgap material in modern electronics and industrial applications.