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nanopatterning

Nanopatterning refers to techniques that create patterns with features on the nanometer scale, typically below 100 to 200 nanometers, though some methods routinely produce features down to a few nanometers. It is used to modify physical properties such as electrical conductivity, optical response, chemical reactivity, and wettability by controlling surface geometry and composition.

Nanopatterning methods are broadly categorized into top-down and bottom-up approaches. Top-down methods start from a bulk

Pattern transfer is typically achieved by patterning a resist or a mask and then etching or depositing

Materials used in nanopatterning include semiconductors (silicon, GaAs), metals, oxides, and polymers. Substrates range from silicon

Challenges include defectivity, line-edge roughness, contamination, process integration, and high equipment costs. Metrology and imaging tools

Emerging directions aim to improve throughput and scalability, including roll-to-roll nanoimprint lithography, directed self-assembly strategies, and

material
and
selectively
remove
or
modify
material
to
form
patterns.
Common
top-down
techniques
include
electron-beam
lithography,
photolithography
with
deep
ultraviolet
or
extreme
ultraviolet
light,
nanoimprint
lithography,
focused
ion
beam
milling,
and
interference
lithography.
Bottom-up
methods
rely
on
the
self-assembly
of
nanoscale
units,
such
as
block
copolymers,
colloidal
nanoparticles,
or
molecular
building
blocks,
to
arrange
patterns
spontaneously
or
under
directed
assembly
conditions.
material
to
embed
the
pattern
into
a
substrate.
This
can
be
followed
by
lift-off,
etch
back,
or
selective
deposition.
Resolution,
throughput,
and
defect
control
are
critical
design
considerations;
high-resolution
patterns
often
trade
off
with
processing
speed
and
cost.
wafers
to
flexible
polymers.
Patterned
surfaces
find
use
in
electronics,
photonics,
sensors,
catalysis,
and
surface
engineering,
including
anti-reflection
coatings,
superhydrophobic
textures,
and
biosensing
interfaces.
such
as
scanning
electron
microscopy
and
atomic
force
microscopy
are
used
to
assess
pattern
fidelity
and
dimensions.
hybrid
approaches
that
combine
bottom-up
pattern
formation
with
top-down
control.