mikrochipinterconnects

Mikrochipinterconnects, also described as microchip interconnects, denote the network of metal connections that link transistors and other components within an integrated circuit and, in some contexts, provide connections to a package or to other chips. On-chip interconnects carry signals and power and determine the resistance, capacitance, delay, and crosstalk of the circuit. They consist of metal lines and vias embedded in dielectric layers and are fabricated by photolithography, deposition, etching, and chemical-mechanical polishing. Since the late 20th century, copper has largely replaced aluminum for lower resistive losses, with diffusion barriers such as tantalum or tantalum nitride and barrier/seed layers to control electromigration. Dielectric materials have evolved from silicon dioxide to low-k polymers to reduce capacitance.

Interconnect architecture is typically described in terms of local, intermediate, and global interconnects, reflecting their function and location within the chip. Local interconnects connect neighboring devices; global interconnects route signals across larger regions of the die. In advanced nodes, copper interconnect lines are very narrow and stacked across multiple levels of metal and dielectric, with vias providing vertical connectivity. For three-dimensional integration, through-silicon vias (TSVs) and micro-bumps enable chip-to-chip and chip-to-package connections, supporting higher density and new packaging approaches such as 2.5D and 3D configurations.

Challenges facing mikrochipinterconnects include electromigration, diffusion-related degradation, stress-induced voiding, and RC delays that grow with scaling. These issues drive ongoing research into barrier and seed layers, alternative materials, novel deposition and patterning techniques, and architectural approaches such as 3D stacking and advanced interposer technologies to improve performance, power efficiency, and reliability.