kvartslasere

Kvartslasere, also known as semiconductor lasers or diode lasers, are a type of laser that emits light from a semiconductor material. The active medium is a p-n junction, where electrons and holes are injected under forward bias. When these electrons and holes recombine, they release energy in the form of photons, leading to laser emission. The wavelength of the emitted light is determined by the band gap of the semiconductor material used. Common materials include gallium arsenide (GaAs), indium phosphide (InP), and gallium nitride (GaN).

The construction of a typical kvartslaser involves a small chip of semiconductor material, often with reflective facets or coatings to form an optical cavity. When an electrical current is applied, stimulated emission occurs, and light is amplified as it bounces back and forth within the cavity. This light is then emitted as a coherent beam through one of the facets. Kvartslasere are widely used due to their compact size, high efficiency, low cost, and ability to be directly modulated by varying the electrical current.

Applications of kvartslasere are diverse and include optical data storage (CD and DVD players), barcode scanners, laser pointers, fiber optic communications, laser printing, and medical devices such as surgical lasers and diagnostic equipment. Their versatility and continuous development in material science have led to their integration into a vast array of modern technologies.