galliumarseniidia
Gallium arsenide, often abbreviated as GaAs, is a compound semiconductor material. It is a direct band gap semiconductor with a cubic crystal structure, similar to that of gallium phosphide and indium antimonide. GaAs has a higher electron mobility and saturation velocity than silicon, which makes it advantageous for high-speed electronic devices and optoelectronic applications. Its ability to emit light when an electric current passes through it is also a key property.
The synthesis of gallium arsenide typically involves reacting elemental gallium with elemental arsenic at high temperatures.
Gallium arsenide finds widespread use in various technologies. It is a primary material for high-frequency transistors