NonGaAs

NonGaAs refers to semiconductor materials and devices that do not use gallium arsenide as the primary semiconductor. The category encompasses a broad range of materials, including silicon (Si), silicon carbide (SiC), gallium nitride and related aluminum gallium nitride (GaN/AlGaN), indium phosphide (InP), and indium gallium arsenide (InGaAs), as well as other IV–VI and III–V compounds. These materials offer different electronic and optical properties, such as bandgap energy, carrier mobility, thermal conductivity, and lattice constants, enabling technologies beyond those available with GaAs.

Silicon is the most widely used non-GaAs material, forming the basis of integrated circuits and solar cells due to its mature fabrication infrastructure and favorable cost. SiC and GaN provide wide bandgaps, high breakdown voltages, and good thermal performance, making them well suited for high-power and high-frequency electronics, as well as optoelectronic devices in the UV and visible ranges. InP and InGaAs are valued for high-speed optoelectronics and telecom applications, including lasers, modulators, and photodetectors in the near- to mid-infrared.

Selection among nonGaAs materials depends on factors such as desired bandgap, speed, power handling, temperature tolerance, and cost. Challenges can include material quality, integration with existing silicon-based processes, and manufacturing maturity for certain compounds. Ongoing research aims to expand performance and reduce costs, broadening the landscape of devices beyond GaAs.