MOSFETt

MOSFETt is not a standard term in electronics and is generally a misspelling or informal variant of MOSFET, which stands for metal-oxide-semiconductor field-effect transistor. In typical usage, MOSFET refers to a voltage-controlled transistor used for switching and amplification.

A MOSFET consists of a semiconductor channel between a source and a drain, with a gate electrode separated from the channel by an insulating oxide. Applying a voltage to the gate modulates the conductivity of the channel, allowing current to flow between source and drain.

Two main types are distinguished by carrier type: n-channel MOSFETs conduct when Vgs is positive with respect to the source, while p-channel devices conduct with negative Vgs. Devices can be enhancement-mode, where a channel forms under gate bias, or depletion-mode, where a channel exists without bias.

Common configurations include the common-source, used for amplification and switching; the common-drain (source follower), which provides voltage buffering; and the common-gate. Power MOSFETs emphasize low on-resistance and high current capability, often packaged for surface-mount applications.

Key electrical characteristics include threshold voltage, transconductance, drain-source on-resistance, and parasitic capacitances such as Cgs and Cgd. MOSFETs also have an intrinsic body diode and are sensitive to temperature, which influences performance and reliability.

Historically, the first MOSFET was demonstrated in 1960 by Atalla and Kahng. Since then, MOSFETs have become foundational in digital and power electronics, with CMOS as the dominant technology for integrated circuits. The term MOSFETt is rarely used in technical literature.