MOSFETet

MOSFETet is a hypothetical transistor concept described in some educational and speculative electronics literature as a variant of the metal-oxide-semiconductor field-effect transistor (MOSFET). The name blends MOSFET with the diminutive suffix -et to indicate a compact or enhanced form. It is not an established device in mainstream industry or standard research, and no commercial implementations exist as of now.

In proposed designs, the MOSFETet employs a dual-gate or multi-gate arrangement to exercise improved electrostatic control over a silicon channel. A primary gate controls the conventional channel conductance, while a secondary gate provides additional modulation, aiming to suppress short-channel effects and reduce leakage in deep submicrometer geometries. Some descriptions depict a three-terminal device with source, drain, and two independently biased gates; others describe integrated top/bottom or side gates that form a gate-all-around-like structure.

Materials and fabrication are cited as challenging. The gate stack typically involves high-κ dielectrics and metal gates, with careful alignment between multiple gates and compatibility with existing CMOS processes. Potential reliability concerns include interface traps, hot-carrier effects, and increased parasitic capacitances from the extra gate structures.

Potential applications discussed in speculative sources include ultra-dense, low-power logic and analog circuits requiring finer gate control. However, as no experimental demonstrations or standard process integrations exist widely, MOSFETet remains a conceptual or teaching tool rather than a production technology. Proposals vary in specifics.