IcVbe
IcVbe, or the Ic–Vbe characteristic, describes the collector current of a Bipolar Junction Transistor (BJT) as a function of the base-emitter voltage (Vbe) at a given collector-emitter voltage (Vce). It is a fundamental way to visualize how the base-emitter diode controls the current flowing in the collector channel, reflecting the transistor’s exponential diode behavior in forward-active operation.
In basic transistor models, the forward-active Ic–Vbe relationship is often approximated by Ic ≈ Is exp(Vbe / Vt),
IcVbe curves are used to extract transistor parameters for device models and SPICE simulations, to design biasing
Limitations include the breakdown of the simple exponential model outside forward-active operation, saturation at low Vce,