HBM2e

HBM2E, or High Bandwidth Memory 2 Enhanced, is a JEDEC-standardized extension of the High Bandwidth Memory family. Like earlier HBM generations, it uses vertically stacked DRAM dies connected by through-silicon vias and is designed to sit near a processor on an interposer to provide very high bandwidth with low power and short data paths.

Compared with HBM2, HBM2E offers higher data transfer rates and larger per-stack capacity, enabling greater overall memory bandwidth without a large physical footprint. The specification also includes refinements related to reliability and timing calibration, supporting robust operation in high-speed configurations and, in many implementations, enhanced error correction features.

HBM2E memory stacks are positioned on an interposer adjacent to GPUs, AI accelerators, or other high-performance processors, and communicate over a wide, multi-channel interface. This arrangement minimizes latency and allows substantial memory bandwidth to be delivered to compute units, which is advantageous for graphics, scientific computing, and machine learning workloads.

Industry status and use: HBM2E was developed to address rising bandwidth demands while maintaining the energy efficiency and compact form factor of HBM. It has been adopted in a range of high-performance devices and serves as a transitional step between HBM2 and the later HBM3 standard in the JEDEC roadmap.

See also: HBM, HBM2, HBM3, JEDEC.