Elektronstrålelithografi

Elektronstrålelithografi, commonly referred to in English as electron-beam lithography (EBL), is a lithography technique that uses a focused beam of electrons to expose an electron-sensitive resist on a substrate. It is a maskless, serial process, enabling very high spatial resolution and flexible patterning without photomasks. The technique is typically implemented with a scanning electron microscope–style column operating under high vacuum to deliver a finely focused beam.

In a typical workflow, a resist such as PMMA, ZEP, or HSQ is spin-coated on the substrate, baked, and then exposed by the raster-scanned electron beam according to a designed pattern. Exposure alters the chemical solubility of the resist in a developer solution. After exposure, the resist is developed to reveal the pattern, which can then be transferred into the underlying film by etching or used for metal lift-off. Multi-layer devices require precise alignment between successive exposures.

EBL offers exceptionally high resolution, with feature sizes well into the tens of nanometers and, in optimized conditions, sub-10-nanometer features in research settings. Its strengths include maskless flexibility, rapid iteration of new designs, and suitability for prototyping complex nanostructures. However, it is relatively slow and costly for large-area patterning due to its serial nature and the need for high-end instrumentation and vacuum systems. Proximity effects from forward and backscattered electrons can blur features, necessitating dose control and proximity effect correction.

Applications span research and development in nanoelectronics, photonics, and quantum devices, as well as mask definition for nanoimprint lithography. Elektronstrålelithografi remains a foundational method in nanofabrication when ultimate resolution and pattern fidelity are paramount.