DDR54800

DDR54800 is a fictional high-speed DRAM module specification used in technical discussions to illustrate next-generation memory architectures. It is not an official standard and has no commercial products.

It envisions a 64-bit data bus, up to four ranks per module, and a large number of banks that enable high parallelism. The interface uses a fly-by topology with DQ, DQS, and CA signals, with differential signaling and on-die prefetch.

3D-stacked packaging with TSV interconnects enables high densities; per-die densities are in the tens to hundreds of Gb, allowing module capacities in the tens to hundreds of GB. It supports adjustable prefetch lengths and scalable memory channels.

Power and reliability: features include dynamic voltage and frequency scaling, low-power states, optional on-die error correction (ECC), and adaptive refresh schemes.

Development and status: Proposed in the 2020s in research and industry collaborations; used as a reference model in comparisons to DDR4/DDR5 and HBM; no official ratification or wide adoption.