CMOSintegraatio

CMOSintegraatio, or CMOS integration, refers to the construction of integrated circuits by combining complementary pairs of metal-oxide-semiconductor transistors on a single silicon substrate. CMOS uses both n-type and p-type MOSFETs in a complementary arrangement, yielding low static power consumption and high noise margins when devices are not switching.

Fabrication and design: A typical CMOS process places p-type transistors in p-wells and n-type transistors in n-wells, with a thin gate oxide separating the gate electrode from the channel. Manufacturing involves standard steps such as photolithography, diffusion, oxide growth, and multiple metal interconnect layers. The complementary arrangement minimizes steady-state current, enabling dense, energy-efficient circuits.

Applications and advantages: CMOS dominates digital logic, microprocessors, memory, and many mixed-signal ICs due to low standby power, high integration density, and robust noise margins. It supports high yields in large-scale integration and is compatible with mature fabrication infrastructure. Limitations include leakage and variability at very small geometries, as well as design complexity for analog and RF blocks.

Trends: Modern CMOS technologies incorporate FinFET transistors, strained silicon, and sometimes silicon-on-insulator substrates to sustain performance at deep submicron scales. Ongoing research focuses on further integrating digital, analog, and RF functions on a single chip and on heterogeneous integration with other materials and devices.