AlSb

AlSb is a binary III-V compound semiconductor composed of aluminum and antimony. It forms a direct-bandgap material with properties that make it useful in optoelectronics and high-speed electronic applications.

The crystal structure of AlSb is zinc blende (sphalerite). It is typically grown by epitaxial methods such as molecular beam epitaxy or metal-organic chemical vapor deposition. Growth often uses substrates like GaSb or InAs with buffer layers to manage lattice mismatch and thermal expansion differences.

Electronic properties include a direct bandgap of about 1.6 eV at room temperature, with the conduction band minimum at the Γ point. This direct gap allows relatively efficient radiative transitions, enabling potential use in near-infrared devices and heterostructures.

AlSb is frequently combined with other elements to form ternary and quaternary alloys, such as AlInSb and AlGaSb, to tailor the bandgap and lattice constant for specific device applications. These alloys are studied for infrared detectors, quantum well structures, and other heterojunction devices that leverage bandgap engineering.

Safety and handling considerations are important, as antimony-containing compounds can be hazardous. Proper controls are required during synthesis, processing, and disposal to minimize exposure and environmental impact.

See also: GaSb, InSb, AlInSb, AlGaSb.