siliconencarbid

Siliconencarbid, commonly referred to as silicon carbide or SiC, is a compound composed of silicon and carbon with the chemical formula SiC. It occurs naturally as the mineral moissanite, first described by Henri Moissan in 1893. Natural moissanite is extremely rare, so the vast majority of commercially available SiC is synthetic.

SiC has a hexagonal crystal structure with several polytypes, including 3C-SiC (cubic), 4H-SiC, and 6H-SiC. It is well known for its hardness, high thermal conductivity, chemical inertness, and wide electronic bandgap. The hardness is approximately 9 on the Mohs scale, and thermal conductivity ranges from about 120 to 270 W/m·K depending on polytype. The wide bandgap—typically 2.3 to 3.3 eV—enables operation at high temperatures and high voltages, along with a high breakdown electric field, making SiC attractive for power electronics and harsh-environment applications.

Production and processing methods include the Acheson process, which combines silica and carbon at high temperatures to form SiC. For electronics, SiC wafers are grown as bulk crystals (4H- and 6H-SiC) and then processed using chemical vapor deposition to create epitaxial layers for devices. SiC is also used as abrasives and refractory ceramics due to its hardness and thermal stability.

Applications span industrial and technological fields. It serves as an abrasive and cutting material, a high-temperature ceramic, and a substrate for power electronics such as diodes and transistors. In research and niche applications, SiC structures are explored for high-frequency devices and light-emitting applications.

Safety considerations focus on inhalation of fine SiC dust, which can cause mechanical irritation; proper industrial hygiene practices are recommended.

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