piezoresistiver

Piezoresistiver refers to the piezoresistive effect, a property of certain materials to change their electrical resistance when subjected to mechanical stress or strain. This phenomenon is distinct from piezoelectricity, which generates an electric charge in response to stress. The piezoresistive effect is typically observed in semiconductors like silicon, germanium, and some metals. When these materials are deformed, their band structure can be altered, leading to a change in the concentration or mobility of charge carriers, and consequently, their electrical resistance.

This effect is widely utilized in sensor technology. Piezoresistive sensors, such as strain gauges, pressure sensors, and accelerometers, leverage this property to convert physical quantities into measurable electrical signals. For instance, a strain gauge bonded to a surface will change its resistance as the surface is stretched or compressed. This change in resistance can then be measured using a Wheatstone bridge circuit and correlated to the applied strain. Semiconductor-based piezoresistive sensors offer advantages like high sensitivity, small size, and compatibility with integrated circuits. However, their performance can be sensitive to temperature variations, requiring compensation techniques. The fundamental principle relies on the direct relationship between mechanical deformation and electrical resistance in specific materials.