intrinsicSchicht

intrinsicSchicht is a term used in semiconductor technology to denote a layer of semiconductor material that is intrinsic, i.e., undoped. In this context, intrinsic means the material has not been intentionally doped with impurities to change its charge carrier concentration. An intrinsicSchicht typically has very low free carrier density and higher resistivity compared with doped regions.

In PIN diode structures and some photodetectors, the intrinsicSchicht forms the 'I' region between the p-type and n-type regions. The intrinsicSchicht expands the depletion region, improving breakdown voltage and enabling efficient photocarrier generation and collection, often at high speeds.

In solar cells and thin-film devices such as p-i-n structures, the intrinsicSchicht absorbs light while sustaining a strong internal electric field, aiding separation of electron–hole pairs. Its thickness is a key design parameter, balancing optical absorption and resistance.

Fabrication methods for intrinsicSchicht include deposition techniques such as chemical vapor deposition, sputtering, or epitaxy, where the material is grown with minimal dopants. Process control, material quality, and impurities set the actual intrinsicSchicht behavior and leakage.

While the exact term intrinsicSchicht is not universal, the underlying concept appears in English as intrinsic layer, intrinsic region, or i-layer. The designation reflects a functional role rather than a fixed material identity, and its specifics depend on the device technology and material system.