Semiconductorconversie

Semiconductorconversie is a term used to describe the intentional modification of semiconductor materials to alter their electronic, optical, or thermal properties. The concept covers changes in band structure, carrier concentration, and defect states that result from processing steps such as doping, alloying, strain engineering, and nanostructuring. It is discussed more often as a materials design idea than as a single standardized procedure.

Typical mechanisms include chemical doping to adjust donor and acceptor levels, creation of heterostructures and quantum wells to engineer band offsets, lattice-strain induced by mismatch, thermal treatments and phase changes, and nanostructuring into quantum dots or nanowires. Surface passivation and controlled defect introduction are also used to tune recombination and carrier lifetimes.

Applications span photovoltaic cells, light-emitting diodes, photodetectors, transistors, and sensors, where tailoring the band gap, mobility, and recombination rates is essential for performance and reliability.

The term is not standard across international literature and is more common in Dutch-language sources or industry discussions. In many contexts, related ideas are described under band-gap engineering, semiconductor processing, or materials science.

Related topics include dopant diffusion, heterojunctions, quantum confinement, and semiconductor fabrication.