SemiLEEs

SemiLEEs refers to Semiconductor Laser-Induced Etching. It is a dry etching process that utilizes a semiconductor laser beam to selectively remove material from a substrate. This technique is a type of photothermal etching, where the laser energy is absorbed by the target material, leading to localized heating and subsequent desorption or reaction with a gaseous etchant.

The process typically involves a focused laser beam directed at the substrate surface in the presence of an etching gas. The laser heats a small area, creating a localized high-temperature zone where chemical reactions with the etchant are enhanced. This leads to anisotropic etching with high spatial resolution, allowing for the creation of intricate patterns and structures.

SemiLEEs offers several advantages over conventional etching methods, including precise control over etch depth and profile, reduced damage to the surrounding material, and the ability to etch at lower overall substrate temperatures. It is particularly useful for microfabrication applications where high precision is required, such as in the fabrication of micro-electromechanical systems (MEMS), optical devices, and integrated circuits. The selectivity of the etching process can often be tuned by adjusting laser parameters like wavelength, power, and pulse duration, as well as the type and pressure of the etching gas.