ReverseBiasBereich

ReverseBiasBereich is a term used in semiconductor electronics to describe the voltage range in which a p–n junction, most commonly a diode, is operated under reverse bias. In this region the applied voltage widens the depletion layer and opposes carrier flow, causing the current to be dominated by a small leakage current rather than by forward conduction. The reverse bias region is bounded by the zero-bias point on one end and the reverse breakdown voltage on the other; the exact boundary depends on device design and manufacturing.

Key characteristics include a relatively low, nearly constant reverse leakage current (I_R) that increases with temperature and with reverse voltage; the I–V curve shows a small current that remains nearly constant up to the breakdown threshold. The breakdown voltage V_BR marks the onset of the breakdown region, where avalanche or Zener mechanisms cause a rapid rise in current. The reverse bias region also behaves as a capacitor with a capacitance that decreases with increasing reverse voltage.

In practice, the ReverseBiasBereich determines the blocking capability of diodes in rectifier circuits and the operating conditions of reverse-biased devices such as detectors and Zener/reference diodes. Designers specify voltage ratings, leakage currents, and breakdown voltages to ensure safe operation. Temperature, surface effects, and fabrication quality influence the leakage and breakdown characteristics.

Related concepts include pn junctions, diode I–V characteristics, reverse leakage, breakdown mechanisms, and reverse-bias capacitors.