Plasmaprocessors

Plasmaprocessors are devices and systems that generate and control plasma to modify materials or drive chemical reactions. They are used for etching, deposition, cleaning, and surface treatment of substrates such as semiconductors, polymers, and metals. A plasmaprocessor typically includes a vacuum chamber, gas delivery, a pumping system, a power source with a matching network, a substrate holder, and process controls for pressure, gas flow, and power.

Plasma is produced by energizing a gas with radiofrequency, microwave, or direct current power, yielding ions, electrons, and reactive radicals. The plasma parameters and any substrate bias determine ion energy and flux, enabling anisotropic etching or film growth. Common configurations are capacitively coupled plasmas (CCP) and inductively coupled plasmas (ICP); other variants include remote plasma sources and magnetically enhanced systems such as ECR-based setups.

Applications include semiconductor fabrication (etching patterns in wafers, deposition of thin films by PECVD), surface modification of polymers, cleaning and conditioning of surfaces, and sterilization of medical devices. Diagnostics such as optical emission spectroscopy and Langmuir probes monitor plasma density and composition.

Design considerations include uniformity over wafer or substrate size, achievable processing rates, material selectivity, and risk of substrate damage from energetic ions. Chamber material compatibility, gas chemistry, and equipment cost are also important.