PNliitoslämpötilaanturit

PNliitoslämpötilaanturit, also known as PN junction temperature sensors, are semiconductor devices that utilize the inherent temperature-dependent characteristics of a PN junction to measure temperature. A PN junction is formed by joining a p-type semiconductor material with an n-type semiconductor material. When a current flows through this junction, a voltage is developed across it. This forward voltage drop is directly influenced by the temperature of the junction.

As the temperature increases, the forward voltage drop across the PN junction decreases. Conversely, as the temperature decreases, the forward voltage drop increases. This predictable relationship allows for temperature sensing. The sensor typically consists of a diode or a transistor, where the base-emitter junction of a bipolar junction transistor (BJT) or the forward-biased diode exhibits this temperature dependency.

The output signal from a PNliitoslämpötilaanturi is usually a voltage that changes linearly with temperature over a certain range. This voltage can be easily measured and converted into a temperature reading. These sensors are advantageous due to their small size, low cost, and relatively good linearity. They are commonly used in various applications, including electronic equipment temperature monitoring, automotive systems, and industrial process control, where an accurate and cost-effective temperature measurement is required. Calibration may be necessary for precise measurements.