Ionestråling

Ionestråling, often translated as ion implantation, is a materials engineering process used to introduce specific atoms or molecules (ions) into the surface of a material. This is typically achieved by accelerating these ions to high energies in a vacuum and then directing them towards the target substrate. The impact of the energetic ions causes them to embed themselves into the material's lattice structure, altering its chemical composition and physical properties.

The primary applications of ion implantation lie in modifying the surface characteristics of materials without affecting their bulk properties. This technique is extensively used in the semiconductor industry to dope silicon wafers with impurities like phosphorus or boron, creating the p-n junctions essential for transistors and integrated circuits. Beyond semiconductors, ion implantation is employed to enhance wear resistance, improve corrosion resistance, alter optical properties, and induce catalytic activity in various materials, including metals, ceramics, and polymers.

The depth and concentration of the implanted ions can be precisely controlled by adjusting the accelerating voltage and the ion beam current, respectively. This level of control allows for the creation of customized surface layers tailored to specific performance requirements. While ion implantation is a powerful tool for surface modification, it can also cause radiation damage to the substrate, which may require subsequent annealing steps to repair the crystal lattice.