IGBTpõhised

IGBTpõhised refers to devices or systems that utilize Insulated Gate Bipolar Transistors (IGBTs). An IGBT is a semiconductor device that combines the simple gate drive characteristics of a MOSFET with the high power handling capabilities of a bipolar transistor. This combination makes IGBTs highly efficient for switching applications in high-power environments.

IGBTs are widely used in power electronics for various purposes. Their primary advantage lies in their ability to handle high voltages and currents while maintaining relatively low conduction losses. This makes them suitable for applications such as motor drives, inverters, power supplies, and electric vehicle powertrains. The "põhised" suffix in Estonian translates to "based," indicating that the technology or system in question is founded upon or utilizes IGBTs as a core component.

The operation of an IGBT involves an insulated gate electrode, similar to a MOSFET, which controls the conductivity of a semiconductor channel. However, unlike a MOSFET which has a voltage-controlled output, the IGBT has a bipolar transistor output. This structure allows for a higher current density and lower on-state voltage drop compared to MOSFETs of similar voltage ratings, especially at higher power levels. Therefore, IGBTpõhised solutions are often chosen when efficient power conversion and control are critical.