Gatesspannung

Gatesspannung is a term encountered in some German-language electronics texts to denote the voltage applied to the gate terminal of a field-effect transistor (FET), typically with reference to the source. In most standard usage, the quantity is called gate-source voltage (V_GS); Gatesspannung may be seen as a synonym or variant spelling, but it is not a standardized term and is relatively uncommon in contemporary literature.

In principle, Gatesspannung is the electrical bias that modulates the conductivity of the transistor’s channel. For an n-channel enhancement MOSFET, increasing V_GS above a threshold voltage V_th induces a conductive channel, while for a p-channel device the polarity is opposite. The magnitude and polarity of the Gatesspannung determine the device’s operating region (cut-off, triode or saturation) and thus its behavior in a circuit.

Practical considerations include the need to drive the gate with appropriate levels and to avoid overstressing the gate oxide. Gate-drive circuits are designed to supply stable, fast transitions without exceeding maximum ratings. Typical drive values vary: logic-level MOSFETs may switch with V_GS around 4.5–10 V, while other devices and IGBTs may require higher drive voltages; maximum V_GS ratings are device-specific, commonly in the order of ±8–20 V for MOSFETs and similar ranges for IGBTs.

Alternative expressions found in German texts include Spannung am Gate or simply gate voltage. In standard notation, V_GS remains the preferred descriptor. See also Gate-source voltage, MOSFET, IGBT, gate driver, threshold voltage.