Backgated
Backgated refers to electronic devices in which the gate electrode is located on the opposite side of the active channel, typically implemented by using a conducting substrate as the gate with a dielectric in between. In practice, a silicon wafer with oxide acts as a back gate for materials such as graphene, MoS2, or other two-dimensional materials laid on the oxide. The back gate forms a capacitor with the channel, so applying voltage to the substrate modulates the carrier density and the Fermi level in the channel, enabling field-effect control without a separate top-gate electrode.
Back-gated devices are common in basic research and early-stage device studies, where a global gate is convenient
Advantages of back-gating include simple fabrication on conventional substrates, broad compatibility with large-area samples, and the
In context, back-gated devices are often contrasted with top-gated devices, where a gate electrode is placed