galliumarzenid

Galliumarzenid, also known as gallium arsenide, is a compound formed from gallium and arsenic. It is a III-V semiconductor with a binary composition and is widely used in electronics and optoelectronics because of its direct bandgap and high electron mobility. In its crystalline form, galliumarzenid typically adopts the zinc blende structure, a cubic arrangement with a lattice constant of about 5.65 angstroms.

Key properties include a direct bandgap of approximately 1.43 eV at room temperature, which enables efficient light emission and absorption in the near-infrared region. Its high electron mobility, around 8,000 cm2/(V·s), contributes to fast electronic devices, while the hole mobility is lower, near several hundred cm2/(V·s). The material has a refractive index near 3.3–3.4 in the infrared, and it can be grown with high crystalline quality using techniques such as molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). Galliumarzenid forms the basis of many heterostructures with aluminum gallium arsenide (AlGaAs) or indium gallium arsenide (InGaAs), enabling quantum wells and high-performance devices.

Applications are diverse: GaAs is used in laser diodes, light-emitting diodes, infrared photodetectors, and high-speed electronics. It is also employed in space-grade solar cells due to its efficiency and resistance to radiation. Synthesis methods include the Czochralski process for bulk crystals and various epitaxial techniques for thin films.

Safety considerations reflect the arsenic component; while solid GaAs is relatively stable, arsenic compounds are toxic, requiring appropriate handling, containment, and disposal procedures.