extremeUV

Extreme ultraviolet, often abbreviated as EUV or EUVL for extreme ultraviolet lithography, refers to electromagnetic radiation in the range of wavelengths from 10 to 124 nanometers. This part of the ultraviolet spectrum possesses properties that make it uniquely useful for certain advanced manufacturing processes, particularly in the semiconductor industry. EUV light has a very short wavelength, which is crucial for creating incredibly small and intricate patterns on silicon wafers, enabling the production of smaller and more powerful microchips.

The primary application of EUV is in the fabrication of next-generation integrated circuits. Traditional photolithography methods, using longer wavelengths of light, have reached their physical limits in terms of the resolution they can achieve. EUV lithography overcomes these limitations by using light with wavelengths as short as 13.5 nanometers. However, EUV light is strongly absorbed by most materials, including air and conventional optical lenses. This necessitates the use of a highly complex and specialized lithography system.

EUV lithography systems employ reflective optics, such as precisely shaped mirrors coated with multilayer materials, rather than refractive lenses. The entire process must occur in a vacuum to prevent absorption by air molecules. Furthermore, the light source for EUV lithography is typically generated by a plasma created from tin droplets using high-powered lasers, a process that is both technologically challenging and energy-intensive. Despite these difficulties, EUV lithography is a critical technology for enabling continued advancements in microelectronics, allowing for the creation of smaller transistors and more complex chip designs.