dopelementen

Dopelementen are impurities deliberately introduced into a semiconductor to modify its electrical properties. In silicon, the most common dopelementen are boron, which creates p-type material, and phosphorus, arsenic, or antimony, which create n-type material. The dopant atoms substitute for silicon in the crystal lattice and introduce either extra holes or extra electrons, enabling charge transport.

Acceptor dopants, such as boron, create holes that act as positive charge carriers, while donor dopants like phosphorus, arsenic, and antimony provide additional electrons. Materials that contain both types of dopants can form p–n junctions, which are the fundamental building blocks of diodes, transistors, and many other electronic devices. Dopants also influence carrier mobility and the electrical behavior of devices through concentration and activation.

Doping is typically achieved by diffusion of dopant species at elevated temperatures or by ion implantation, followed by annealing to repair lattice damage and activate the dopant atoms. Doping profiles can be gradual or abrupt, and precise control of concentration and depth is essential for device performance.

Concentrations of dopelementen in silicon commonly range from about 10^13 to 10^19 atoms per cubic centimeter, depending on the device requirements. Low-level doping is used for analog circuits and sensors, while heavy doping can lead to degenerative conduction and altered carrier mobility.

Applications of dopelementen include the fabrication of transistors, diodes, solar cells, and many integrated-circuit components. They are central to modern electronics, enabling tailored electrical behavior and device functionality.