ReverseBiasSpannung

ReverseBiasSpannung refers to the voltage applied in reverse across a semiconductor junction, most commonly a p-n junction diode. In reverse bias, the diode’s anode is connected to the more negative terminal and the cathode to the more positive terminal, which widens the depletion region and greatly reduces current flow. The resulting current is leakage current, typically small but it increases with temperature and with higher reverse voltage.

The maximum reverse voltage a device can withstand before breakdown is specified as the reverse breakdown voltage or peak inverse voltage, depending on the device type. If the reverse bias exceeds this limit, breakdown can occur, potentially damaging the device. Manufacturers specify leakage current, breakdown voltage, and dynamic resistance at a given temperature. Real devices also show a small increase in leakage as temperature rises.

In practice, reverse bias is used to block current in rectifier circuits, and to create regulated reference voltages in Zener and transient voltage suppression diodes, where the device operates in reverse breakdown to maintain a stable voltage. In bipolar transistors, the base-collector junction is normally reverse biased during active operation; in MOS devices, a reverse bias across drain and source helps define off-state behavior.

Safety and design notes: leakage current increases with temperature, margins to breakdown should be included, and adequate derating should be applied to prevent accidental breakdown during transients or surges. Understanding ReverseBiasSpannung is essential for selecting diodes, protecting circuits, and designing regulators and clamp networks.