PostCMOS

Post-CMOS refers to a family of technologies and research directions that aim to extend or replace conventional CMOS technology as the foundation of integrated circuits. The term broadly captures approaches that go beyond traditional MOSFET scaling, including new device concepts, materials, and circuit architectures that could offer improvements in energy efficiency, performance, or density.

Major strands include spintronic and memristive devices for logic and memory, such as MRAM and resistive RAM; phase-change memory; ferroelectric and tunnel field-effect transistors; and devices based on two-dimensional materials or III–V semiconductors intended to supplement or replace silicon transistors. In addition, post-CMOS research encompasses alternative computing paradigms such as neuromorphic and neurosynaptic architectures, photonic interconnects, and quantum or superconducting components, as well as approaches based on 3D integration and heterogeneous packaging to overcome interconnect bottlenecks.

As of the early 2020s, CMOS remains dominant for mass production, while post-CMOS technologies have matured mainly in niche applications or pilot lines. Commercial adoption varies by device type: MRAM and PCM have found markets in nonvolatile memory and specialty applications; FeFETs and TFETs are being explored to augment or extend existing CMOS processes. Widespread deployment of fully post-CMOS logic or long-term replacement remains uncertain, due to manufacturing, scaling, and cost challenges, as well as reliability and integration considerations.