Lämpöoksidoitua

Lämpöoksidoitua is a Finnish term that translates to "thermally oxidized" in English. It describes a process where a material undergoes oxidation at elevated temperatures. This oxidation typically involves the reaction of the material with oxygen in the surrounding atmosphere.

The thermal oxidation process can occur in various materials, including metals and semiconductors. For metals, it often results in the formation of a metal oxide layer on the surface. This oxide layer can alter the material's properties, such as its electrical conductivity, corrosion resistance, or appearance. For instance, iron can undergo thermal oxidation to form rust (iron oxides).

In the semiconductor industry, thermal oxidation is a crucial step in the fabrication of integrated circuits. Silicon dioxide (SiO2) is commonly grown on silicon wafers through thermal oxidation. This silicon dioxide layer serves as an excellent electrical insulator and is used to create gate dielectrics, passivation layers, and isolation structures within microelectronic devices. The process usually involves exposing the silicon wafer to oxygen or steam at high temperatures, typically between 800 and 1200 degrees Celsius. The rate of oxide growth and the quality of the oxide layer are highly dependent on temperature, pressure, and the oxidizing ambient.

Other materials can also be thermally oxidized to achieve specific properties. For example, certain polymers can be thermally oxidized to improve their flame retardancy or surface adhesion. The specific outcome of thermal oxidation depends heavily on the base material and the conditions under which the process is carried out.