InGaN
InGaN is a semiconductor alloy of indium nitride and gallium nitride, commonly written as In_xGa_{1−x}N, where x denotes the indium content. By varying composition, the material’s band gap can be tuned, enabling emission from near-ultraviolet to the green region. Increasing indium content lowers the band gap and shifts emission toward longer wavelengths, while low indium content yields shorter wavelengths similar to GaN.
The material has a wurtzite crystal structure and is typically grown by metal-organic chemical vapor deposition
InGaN is central to modern optoelectronics, especially blue and green light-emitting devices. It forms the active