Gasphasenepitaxie
Gasphasenepitaxie, known in English as gas‑phase epitaxy, is a surface science technique for producing crystalline thin films on substrates under controlled vapor conditions. The method relies on the adsorption of gaseous precursors onto the heated substrate surface, where they decompose, rearrange, and form a single‑crystal lattice that matches the underlying substrate.
The earliest gas‑phase epitaxy work dates back to the 1950s, when research groups used phosphine and arsine
Gas‑phase epitaxy offers several advantages over solid‑phase methods. Because the substrate is never in direct contact
Today, gas‑phase epitaxy remains a cornerstone of advanced semiconductor manufacturing, enabling the growth of III–V, II–VI,