Galliumnitridipohjaiset

Gallium nitride is a binary III/V semiconductor compound of gallium and nitrogen, with the chemical formula GaN. Gallium nitride is a direct band gap material with a band gap of 3.4 eV, making it suitable for high-power, high-frequency, and optoelectronic applications. Its high thermal conductivity and chemical stability also contribute to its utility in demanding environments.

Gallium nitride is most commonly used in the fabrication of light-emitting diodes (LEDs) and laser diodes, particularly for blue and ultraviolet light. Its wide band gap allows for the emission of shorter wavelengths of light compared to other semiconductor materials. GaN-based LEDs are a cornerstone of modern lighting technology, offering energy efficiency and long lifetimes.

Beyond optoelectronics, gallium nitride is gaining prominence in high-electron-mobility transistors (HEMTs) for radio frequency (RF) power amplification. These transistors can operate at higher frequencies and power levels than their silicon counterparts, making them valuable for telecommunications infrastructure, radar systems, and satellite communications. The ability of GaN to withstand high temperatures and voltages also makes it attractive for power electronics applications, such as in electric vehicles and power supplies.

The synthesis of high-quality gallium nitride crystals is challenging due to the lack of a suitable bulk substrate with a lattice constant and thermal expansion coefficient that closely matches GaN. This often leads to the use of foreign substrates like sapphire or silicon, which can introduce defects into the GaN layers. Research continues to focus on improving growth techniques and developing native substrates to enhance device performance and reliability.