GaPNs
GaPNs, or Gallium Phosphide Nitrides, represent a class of semiconductor materials that combine gallium (Ga), phosphorus (P), and nitrogen (N) in varying atomic ratios. These materials are of interest due to their potential for applications in optoelectronics and high-power electronics. The specific properties of GaPNs are highly dependent on the precise stoichiometry and the crystalline structure, which can range from wurtzite to zincblende.
The incorporation of nitrogen into gallium phosphide (GaP) can significantly alter its bandgap energy, optical properties,
Research into GaPNs is ongoing, focusing on developing efficient synthesis methods and understanding the fundamental material