DRAMmuistin

DRAMmuistin, often referred to as Dynamic Random-Access Memory, is a type of semiconductor memory that stores each bit of data in a separate capacitor within an integrated circuit. Because the electric charge on the capacitors leaks away over time, DRAM requires periodic refreshing to maintain the stored information. This constant need for refreshing is what gives it the "dynamic" designation.

DRAM is the most common type of main memory in modern computers and many other electronic devices. Its primary advantage over static random-access memory (SRAM) is its higher density, meaning more memory can be packed into a smaller physical space. This also generally translates to lower cost per bit. However, DRAM is slower than SRAM due to the time required for charging and discharging the capacitors and the refreshing process.

The basic building block of DRAM is a memory cell consisting of a capacitor and a transistor. To read data, the charge in the capacitor is sensed. To write data, the capacitor is charged or discharged. The refresh operation involves reading the value of each capacitor and then rewriting it to maintain its charge. This refresh cycle typically occurs thousands of times per second.

The speed and capacity of DRAM have continuously improved over the years, leading to various generations of DDR (Double Data Rate) SDRAM, such as DDR3, DDR4, and DDR5, each offering increased bandwidth and efficiency. DRAM's widespread adoption is due to its balance of cost, density, and performance, making it the workhorse for the main memory in billions of devices worldwide.