AnrikningslägesMOSFETs

AnrikningslägesMOSFETs, also known as enhancement-mode MOSFETs, are a type of insulated-gate field-effect transistor. Unlike depletion-mode MOSFETs, enhancement-mode devices are normally off, meaning they have no conductive channel between the source and drain when no gate voltage is applied. A positive gate voltage (for an N-channel MOSFET) or a negative gate voltage (for a P-channel MOSFET) is required to induce a conductive channel and allow current to flow. This induced channel is referred to as the "enhancement mode" operation.

The operation of an enhancement-mode MOSFET relies on the creation of an inversion layer in the semiconductor beneath the gate insulator. This layer forms when the electric field generated by the gate voltage attracts charge carriers to the surface of the semiconductor, effectively creating a conductive path. The magnitude of the gate voltage determines the conductivity of this channel, and thus the drain current.

Enhancement-mode MOSFETs are widely used in digital logic circuits, power electronics, and high-frequency applications due to their ability to act as switches and amplifiers. Their normally-off characteristic makes them particularly suitable for switching applications where a clear distinction between on and off states is desired. The threshold voltage, the minimum gate-source voltage required to establish a conductive channel, is a key parameter defining the device's switching behavior.