ALDtekniikkaa

ALDtekniikkaa refers to Atomic Layer Deposition (ALD) technology. It is a thin-film deposition method that enables the atomic-level control of film thickness and composition. ALD works by exposing a substrate to sequential, self-limiting chemical reactions. These reactions involve alternating pulses of two or more reactive precursors, separated by inert gas purges. Each precursor reacts with the surface until saturation is reached, forming a monolayer of material. This sequential and self-limiting nature ensures that the deposition process is highly conformal and uniform, even on complex three-dimensional structures.

The key advantage of ALD is its precise control over film thickness at the atomic scale. This is achieved by repeating the precursor pulse cycles, with each cycle typically depositing only one atomic layer. This level of control is crucial for applications requiring ultra-thin films with specific properties. ALD can deposit a wide range of materials, including oxides, nitrides, metals, and sulfides. The process typically operates at relatively low temperatures, making it compatible with a variety of substrates, including heat-sensitive materials.

ALDtekniikkaa has found widespread use in various high-technology industries. In the semiconductor industry, it is used for depositing gate dielectrics, diffusion barriers, and passivation layers. Its ability to coat complex geometries uniformly makes it ideal for fabricating advanced microelectronic devices. Beyond semiconductors, ALD is employed in optics for anti-reflective coatings, in catalysis for creating high-surface-area catalysts, in energy storage for battery electrodes, and in biomedical applications for surface functionalization. The continuous development of new precursor chemistries and process variations continues to expand the capabilities and applications of ALDtekniikkaa.