silicideforming

Silicideforming refers to the tendency of certain elements to react with silicon to form silicon-metal compounds known as silicides. These materials are characterized by defined stoichiometries and distinct electrical, thermal, and mechanical properties that differ from both the parent metal and silicon. Silicides are most important in the electronics and microfabrication industries due to their often low resistivity, good adhesion to silicon, and compatibility with silicon processing temperatures.

Common silicide-forming elements include transition metals such as titanium, cobalt, nickel, platinum, and tungsten. The most widely used silicides in microelectronics are titanium silicide (TiSi2), cobalt silicide (CoSi2), and nickel silicides (NiSi, NiSi2). Each silicide phase offers different electrical resistivity, thermal stability, and reactivity, influencing material choice for specific applications and process windows.

Formation of silicides typically involves diffusion-driven reactions at a metal–silicon interface, often through a deposition of metal followed by annealing. In semiconductor fabrication, self-aligned silicide (sali¬de) processes are employed to form silicides selectively on silicon regions, reducing contact resistance while avoiding undesired metallization of adjacent areas. The resulting silicides provide low resistivity contacts and diffusion barriers, enabling reliable metalization for transistors and interconnects.

Applications center on silicon-based electronics, where silicides are used for gate electrodes, source/drain contacts, and interconnects. Key considerations include phase control, thermal stability, diffusion behavior, and interface quality, which collectively influence device performance and reliability.