pyörityspinnoituksessa

Pyörityspinnoituksessa, often translated as "rotation sputtering," is a physical vapor deposition (PVD) technique used to create thin films on a substrate. It is a variation of the more general sputtering process. In standard sputtering, a target material is bombarded with ions, causing atoms to be ejected from the target and deposit onto the substrate. In pyörityspinnoituksessa, the substrate holder is rotated during this deposition process.

The rotation of the substrate is the key distinguishing feature of pyörityspinnoituksessa. This rotation ensures more uniform film thickness and composition across the entire surface of the substrate. Without rotation, the film deposited directly facing the sputtering source would be thicker than areas further away, leading to significant thickness variations. By continuously moving the substrate surface relative to the source, the deposition rate is averaged out over the entire area.

This technique is particularly beneficial when depositing on multiple substrates simultaneously or when large-area uniformity is critical. Applications include the production of optical coatings, semiconductor devices, and decorative finishes where consistent film properties are paramount. The controlled rotation allows for precise control over the deposition rate and film structure. The sputtering gas, typically an inert gas like argon, is ionized in a plasma, and these ions are accelerated towards the target. The ejected target material then travels through the vacuum chamber and deposits onto the rotating substrate.