nTypHalbleitern

nTypHalbleitern (German for n-type semiconductors) are semiconductor materials in which the majority charge carriers are electrons. They are produced by introducing donor impurities into a host semiconductor such as silicon or germanium. Donor atoms, for example phosphorus, arsenic or antimony in silicon, have one more valence electron than the host lattice. This extra electron is weakly bound and readily ionizes at room temperature, providing free electrons that contribute to electrical conductivity.

In n-type material, electrons are the dominant carriers while holes are minority carriers. Doping raises the Fermi level toward the conduction band, enhancing electron concentration and reducing resistivity. Doping levels typically range from about 10^14 to 10^18 impurities per cubic centimeter, allowing precise control of electrical properties for devices.

Manufacturing methods include diffusion of donor species into the crystal, ion implantation, or doping during crystal growth (such as the Czochralski or float-zone processes), followed by annealing to repair lattice damage. The result is a material with high electron mobility relative to hole mobility, which influences device performance.

Applications of n-type semiconductors span diodes, transistors, and integrated circuits. They form essential components in p-n junctions, where contact with p-type regions enables rectification and signal processing. In metal-oxide-semiconductor devices, n-type channels are used in n-channel MOSFETs. Compared with p-type semiconductors, n-type materials enable complementary device structures and broader functionality in electronic systems.