arsenidealuminum

Arsenide aluminum, also known as aluminum arsenide (AlAs), is a compound with the chemical formula AlAs. It is a semiconductor material belonging to the III-V group of elements, meaning it is composed of elements from Group III (aluminum) and Group V (arsenic) of the periodic table. AlAs is known for its relatively wide band gap, which makes it useful in certain electronic and optoelectronic applications. It crystallizes in the zincblende structure, which is common for many III-V semiconductors.

The properties of aluminum arsenide are distinct from its constituent elements. It is a hard, brittle solid. Its electrical conductivity is intermediate between that of a conductor and an insulator, characteristic of a semiconductor. AlAs is often used in conjunction with other III-V materials, such as gallium arsenide (GaAs), to create alloys like aluminum gallium arsenide (AlGaAs). These alloys allow for tuning of the electronic and optical properties by varying the proportions of Al and Ga. This tunability is crucial for the fabrication of devices like lasers, light-emitting diodes (LEDs), and high-speed transistors. The synthesis of aluminum arsenide typically involves high-temperature reactions between aluminum and arsenic, often under controlled atmospheric conditions.