Schottkyn
Schottky is a type of diode that has a low forward voltage drop, typically around 0.15 to 0.3 volts, compared to the 0.6 to 0.7 volts of a standard silicon diode. This low voltage drop is due to the Schottky barrier, a junction formed between a metal and a semiconductor. The metal side of the junction is typically made of a material with a high work function, such as tungsten or molybdenum, while the semiconductor side is usually made of n-type silicon.
Schottky diodes are known for their fast switching times, making them suitable for high-frequency applications. They
The Schottky diode was first proposed by Walter H. Schottky in 1938, and it has since become