Schottkyn

Schottky is a type of diode that has a low forward voltage drop, typically around 0.15 to 0.3 volts, compared to the 0.6 to 0.7 volts of a standard silicon diode. This low voltage drop is due to the Schottky barrier, a junction formed between a metal and a semiconductor. The metal side of the junction is typically made of a material with a high work function, such as tungsten or molybdenum, while the semiconductor side is usually made of n-type silicon.

Schottky diodes are known for their fast switching times, making them suitable for high-frequency applications. They are also used in voltage clamping circuits, where they prevent the voltage from exceeding a certain level. Additionally, Schottky diodes are often used in solar cells and as rectifiers in power supplies due to their low forward voltage drop and high current handling capability.

The Schottky diode was first proposed by Walter H. Schottky in 1938, and it has since become a fundamental component in many electronic circuits. Its unique properties make it an essential tool in various fields, including telecommunications, power electronics, and renewable energy.